参考文献/References:
[1] Aspnes D. Handbook on semiconductors [M]. New York: North-Holland, 1980: 109-116.
[2] 金鹏. In/GaAs自组装量子点结构和光学性质研究 [D]. 北京: 中国科学院半导体研究所, 2003.
[3] Chen R B, Lu Yanten. Theoretical study of modulated absorption spectra: from quantum wire to quantum [J]. Phys Lett A, 2000, 264: 417-423.
[4] Hsr T M, Chang W H, Huang C C, et al. Quantum-confined stark shift in electroreflectance of a InAs/InxGa1?xAs self-assembled quantum dots [J]. Appl Phys Lett, 2001, 78: 1760-1762.
[5] Shen H, Dutta M. Franz-Keldysh oscillations in modulation spectroscopy [J]. J Appl Phys, 1995, 78: 2151-2175.
[6] Aspnes D E, StudnaA A. Schottky-Barrier electroreflectance:
application to GaAs [J]. Phys Rev B, 1973, 7: 4605-4625.
[7] Yu M Sirenko, Jeon J B, Kim K W, et al. Envelope-function formalism for valence bands in wurtzite quantum wells [J]. Phys Rev B, 1996, 53(4): 1997-2009
[8] Litvinov V I. Optical transitions and gain in group-III nitride quantum wells [J]. J Appl Phys, 2000, 88(10): 5814-5820
[9] Li Junjie, Liu Liming, Yao Duanzheng. Piezoelectric field?dependent optical nonlinearities nduced by interband transition in InGaN/GaN quantum well [J]. Physica E, 2005, 27: 221-226.
[10] Xu Yong, Xiong Guiguang. Quadratic electro-optic effects and electro-absorption process in semiconductor carbon nanotubes [J]. Physica E, 2004(25): 23-28.
[11] Yamada M, Ishiguro H. Gain calculation of undoped gaas injection laser taking account of electronic intra-band relaxation [J]. Jpn J Appl Phys, 1981, 20: 1279-1288.
[12] Chen R B, Lu Yanten. Critical thickness of quantum well for observing Franz-Keldysh oscillation [J]. Solid State Communications, 2000, 114: 117-120.
[13] Aspnes D E. Electric field effects on the dielectric constant of solids [J]. Phys Rev, 1967, 153: 972 -982.
[14] Aspnes D E, Studna A A. Schottky-barrier electroreflectance: application to GaAs [J]. Phys Rev B, 1973(7): 4605-5625.
[15] Tansley T L, Egan R J. Point-defect energies in the nitrides of aluminum, gallium, and indium [J]. Phys Rev B, 1992, 45: 10942-10950.
[16] Suzuk M. First-principles calculations of effective-mass parameters of AlN and GsN [J]. Phys Rev B, 1995, 52: 8132-8139.
[17] Jeon J B, MSirenko Y, Kim K W. Valence band parameters of wurtzite materials [J]. Solid State Commun, 1996, 99(6): 423- 426.
[18] Batchelor R N, Hamnett A. Proceedings of the society of photo-optical instrumentation engineers [M]. SPIE, Bellingham, WA, 1990, 1286: 175-177.
[19] Wysin G M, Smith D L, Redondo A [J]. Picosecond Phys Rev B, 1988(38): 12514-12524.
[20] 高海燕, 李聪, 袁超. GaN圆柱形量子点的量子限制Stark频移 [J]. 江西师范大学学报: 自然科学版, 2011, 35(3): 228-230.